Penghui He

Penghui He, received a B.S.degree from Central South University in 2016, and received a Ph.D. degree ‍from South China University of Technology in 2021. Now, he is an assistant research fellow ‍‍in the lab of Professor Lei Liao, focusing on oxidesemiconductors for optoelectronic applications. He has published more than 20 papers in ACS Nano, Advanced Materials, APL, IEEE EDL/TED, et al, including theeffect of lanthanide charge transfer transition on the NBIS stability of rareearth doped oxide TFT, study on bilayer Tb-doped indium oxide channel improving the stability and mobility of oxide TFTs, and study on high-performancelight-emitting field-effect transistors based on oxide and QDs.