张群，复旦大学材料科学系教授，本科毕业于复旦大学物理系物理电子学专业获学士学位，后在日本东京工业大学物理电子学专业学习，获得硕士学位和博士学位。主要研究领域是高迁移率氧化物半导体材料、高性能氧化物薄膜晶体管器件及其电学稳定性和可靠性的改善、开发新型氧化物半导体材料、氧化物TFT器件结构和真空制备工艺，在国际同行评审科学期刊发表了140多篇论文。
氧化物薄膜晶体管的基础及其研发进展
Fundamental and Recent Progress in Oxide-TFT Research & Development
课程简介：
课程在介绍薄膜晶体管的功能材料、器件结构、基本工作原理、电学特性和电学稳定性的基础上，重点讲解氧化物薄膜晶体管发展历史、沟道层的传导机制，电子结构特征，沟道层材料设计理论、器件设计原理，离子掺杂，高迁移率，电学稳定性，尺寸效应等基本概念。聚焦氧化物TFT器件制备的PVD、CVD和ALD等真空制造工艺及其影响因素，回顾氧化物TFT在沟道层材料、器件结构、制备工艺和驱动电路的研发进展。
The course introduces the functional materials, device structure, basic working principles, electrical structure characteristics, and electrical stability of thin-film transistors. It put the emphasis on the development history of oxide thin-film transistors, the conduction mechanism of the channel layer, electronic structure characteristics, channel layer material design theory, device design principles, ion doping, high mobility, electrical stability, size effects, and other basic concepts. It also focuses on the vacuum manufacturing processes such as PVD, CVD, and ALD used in the fabrication of oxide TFT devices and their influencing factors. The course reviews the research and development progress of oxide TFTs in terms of channel layer materials, device structures, fabrication processes, and driving circuits.
