Man Wong

Man Wong was born in Beijing, China. From 1979 to 1984, he studied at the Massachusetts Institute of Technology, USA, where he obtained his BS and MS degrees in Electrical Engineering. From 1985 to 1988, he was at the Center for Integrated Systems at Stanford University, USA, where he worked on tungsten gate MOS technology and obtained his PhD degree, also in Electrical Engineering. From 1988 to 1992, he was with the Semiconductor Process and Design Center of Texas Instruments, USA and worked on the modeling and development of integrated-circuit metallization systems and dry/vapor surface conditioning processes. Since 1992, he has been with the Department of Electronic and Computer Engineering at The Hong Kong University of Science and Technology, Hong Kong. His research interests include micro-fabrication technology, device structure and material; physics and technology of thin-filmtransistor; organic light-emitting diode display technology; modeling and implementation of integrated micro-systems; and thin-film solar cell device and process technology. He is a member of Tau Beta Pi, Eta Kappa Nu and Sigma Xi.

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Elevated-Metal Metal-OxideThin-Film Transistor:

ABack-Gate Architecture with Annealing-Induced Source/Drain Regions

Man Wong

The resistivity of aclass of metal-oxide (MO) semiconductors is found to depend on the material boundary condition and the atmosphere during a thermal anneal. This distinct property of the MO semiconductors is applied to the realization of an elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) with annealing-induced source/drain regions. Compared to the conventional“back-channel etched” and “etch-stop” TFT architectures, an EMMO TFT offers the small footprint and small parasitic overlap capacitance of the former and the protection of the back-channel of the latter. Further enhancement of the technology and architecture of an EMMO TFT for meeting the requirements of current display trend will also be discussed.

升金型金属氧化物薄膜晶体管技术

                                                                                    ——内嵌热致源漏的底栅结构

Man Wong

   在热退火过程中，金属氧化物(MO)半导体的电阻率被发现取决于边界材料和气氛环境等特性。源于MO半导体的这一独特特性，内嵌热致源漏的升金型金属氧化物（EMMO）薄膜晶体管（TFT）得以实现。与传统的"背沟道蚀刻 "和"蚀刻阻挡 "TFT结构相比，EMMOTFT兼具前者小尺寸和小寄生电容，以及后者的沟道保护特性。此课程中也会介绍一些为满足当前显示发展趋势要求的对应的EMMOTFT技术和结构的改良。