Penghui He (何鹏辉)

何鹏辉，2016年从中南大学本科毕业后直博进入华南理工大学彭俊彪教授课题组。2021年获得博士学位。现为湖南大学廖蕾教授团队的助理研究员。在ACS Nano, Advanced Materials,APL, IEEE EDL/TED等期刊上发表论文20余篇。主要工作包括研究镧系元素的电荷转移跃迁对稀土掺杂氧化物TFT NBIS性能的影响；采用双有源层沟道设计，实现高迁移率和高稳定性的铽掺杂氧化物TFT；通过集成氧化物半导体和QD发光材料实现高性能的发光场效应管晶体管。

Penghui He, received aB.S. degree from Central South University in 2016, and received a Ph.D. degree ‍from South China University ofTechnology in 2021. Now, he is an assistant research fellow ‍‍in the lab of Professor Lei Liao,focusing on oxide semiconductors for optoelectronic applications. He haspublished more than 20 papers in ACS Nano, Advanced Materials, APL, IEEEEDL/TED, et al, including the effect of lanthanide charge transfer transitionon the NBIS stability of rare earth doped oxide TFT, study on bilayer Tb-dopedindium oxide channel improving the stability and mobility of oxide TFTs, andstudy on high-performance light-emitting field-effect transistors based onoxide and QDs.